Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

Journal of nanoscience and nanotechnology (2014-04-25)

Bomin Cho, Sungyong Um, Honglae Sohn

摘要

Asymmetric porous silicon multilayer (APSM)-based optical biosensor was developed to specify human Immunoglobin G (Ig G). APSM chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon multilayer. APSM prepared from anisotropic etching conditions displayed a sharp reflection resonance in the reflectivity spectrum. Each spot displayed single reflection resonance at different wavelengths as a function of the lateral distance from the Pt counter electrode. The sensor system was consisted of the 3 x 3 spot array of APSM modified with protein A. The system was probed with an aqueous human Ig G. Molecular binding and specificity was monitored as a shift in wavelength of reflection resonance.

材料

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品牌

产品描述

215619

Sigma-Aldrich

硅, powder, −325 mesh, 99% trace metals basis

646687

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

633097

Sigma-Aldrich

硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

647101

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

647764

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

647675

Sigma-Aldrich

硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

647535

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

343250

Sigma-Aldrich

硅, pieces, 99.95% trace metals basis

647780

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647543

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

647799

Sigma-Aldrich

硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm

647802

Sigma-Aldrich

硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm

647705

Sigma-Aldrich

硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

647772

Sigma-Aldrich

硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

GF91141792

硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%

GF71817543

硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%

GF46268433

硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

GF64686998

硅, rod, 100mm, diameter 2.0mm, crystalline, 100%

GF05482852

硅, rod, 50mm, diameter 2.0mm, crystalline, 100%

GF04814951

硅, rod, 100mm, diameter 25mm, crystalline, 100%

GF37993595

硅, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%

GF73529051

硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%

GF10907377

硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%

GF20311254

硅, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%

GF64342188

硅, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%

GF16286227

硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%

GF14076930

硅, rod, 50mm, diameter 5.0mm, crystalline, 100%

GF16363391

硅, rod, 10mm, diameter 2.0mm, crystalline, 100%

GF70438518

硅, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%

GF43555664

硅, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%