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Merck
CN
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文件

安全信息

633097

Sigma-Aldrich

硅

nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis

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别名:
Silicon anode material
线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12352302
PubChem化学物质编号:
24882537
NACRES:
NA.23

质量水平

100

检测方案

≥98% trace metals basis

形式

nanopowder

粒径

<100 nm (TEM)

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

一般描述

我们的 电池级硅纳米粉具有100纳米的颗粒尺寸和 98%的纯度。由于其良好的电化学性质，这种轻质灰色粉末在先进电池研究和开发中极受 欢迎 。它具有高比表面积， 从而实现更好的电化学性能，小尺寸确保 其在电池电极中分散良好。凭借一致的 颗粒尺寸和高纯度，这种硅纳米粉末是 有意改善锂离子电池性能的电池研究者和制造商 的绝佳选择。

应用

我们的 硅纳米粉是一种多功能材料，可用于 各种领域，如能量储存、生物医学和电子 行业。良好的电化学性质令其成为先进锂离子电池开发中极受欢迎 的材料。 我们电池级硅纳米粉末的小颗粒尺寸和高比表面积 令其成为锂离子电池阳极中 良好的候选材料。 与传统石墨阳极相比，使用硅纳米粉末阳极的高容量锂离子电池 有望实现更大的能量密度和更长的使用寿命 。 此外，高纯度和一致的颗粒尺寸使其成为 电池研究人员和制造商的可靠材料。

特点和优势

小颗粒尺寸确保这种电池级硅纳米粉在电池电极内部分散良好。
  • 良好的分散性
  • 高比表面积
  • 改善的机械稳定性
  • 增强的性能

象形图

Flame
GHS02

警示用语：

Warning

危险声明

H228

危险分类

Flam. Sol. 2

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品

分析证书(COA)

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Yuki Kobayashi et al.
Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 19(5), 176-176 (2017-06-06)
Si and its oxide are nonpoisonous materials, and thus, it can be taken for medical effects. We have developed a method of generation of hydrogen by use of reactions of Si nanopowder with water in the neutral pH region. Si
Zhenhui Kang et al.
Nanoscale, 3(3), 777-791 (2010-12-17)
Owing to their abundant unique properties and ready compatibility with Si microelectronic technology, Si nanostructures are becoming one of the most important classes of nano semiconductors. Particularly, small-sized Si nanoparticles possess distinctive photoluminescence (PL), biocompatibility, and active surface properties. In
High temperature Boron-based thermoelectric materials
Mori T
Material Matters, 4, 37-37 (2009)
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
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