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Merck
CN
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安全信息

647535

Sigma-Aldrich

硅

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

别名:

Silicon element

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12352300
PubChem化学物质编号:
24883543
NACRES:
NA.23

表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

质量水平

100

不包含

dopant

直径× 厚度

3 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半导体性质

<100>, N-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

应用

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

物理属性

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 1,000 - 2,300Ωcm

储存分类代码

13 - Non Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCW4829
MKCR0472
MKCS1535
MKCQ0514
MKCN5974

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24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Nanolithography in microelectronics: A review
Seisyan RP
Technical Physics, 56(8), 1061-1061 (2011)
Stretchable and foldable silicon integrated circuits
Kim D, et al.
Science (New York, N.Y.), 320(5875), 507-511 (2008)
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
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