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Merck
CN

647535

硅

greener alternative

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

别名:

Silicon element

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关于此项目

线性分子式:
Si
化学文摘社编号:
7440-21-3
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
24883543
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
MFCD00085311

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产品名称

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

InChI

1S/Si

SMILES string

[Si]

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

does not contain

dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

3 in. × 0.5 mm

Quality Level

100

matrix

silicon base material

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<100>, N-type

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相关类别

General description

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 1,000 - 2,300Ωcm
We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.

Application

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

存储类别

13 - Non Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品
此项目有

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCZ3550
MKCW4829
MKCR0472
MKCS1535
MKCQ0514

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Stretchable and foldable silicon integrated circuits
Kim D, et al.
Science (New York, N.Y.), 320(5875), 507-511 (2008)
Nanolithography in microelectronics: A review
Seisyan RP
Technical Physics, 56(8), 1061-1061 (2011)
24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
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