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Merck
CN

646687

硅

greener alternative

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

别名:

硅元素

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关于此项目

线性分子式:
Si
化学文摘社编号:
7440-21-3
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
24883476
UNSPSC Code:
12352300
EC Number:
231-130-8
MDL number:
MFCD00085311

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产品名称

硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

InChI

1S/Si

SMILES string

[Si]

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

does not contain

dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

2 in. × 0.5 mm

Quality Level

100

matrix

Silicon base material

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

Enabling

semiconductor properties

<100>, N-type

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相关类别

Application

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.：该文解决了在锂离子电池中采用高性能硅负极的挑战和实际应用，提供增强效率的创新解决方案(Khan et al., 2024)。
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.：研究改进了自支撑钙钛矿氧化物制造的应变工程，对于各种高纯硅的学术应用有重要意义(Yun et al., 2024)。

General description

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
硅晶片或基底的“切片”可应用于集成电路、太阳能电池等的制造中。它们可用作各种微电子设备的基底。
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 100 - 3000Ωcm
We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.

存储类别

13 - Non Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

法规信息

新产品
此项目有

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCX8251
MKCW6935
MKCT4983
MKCT4982
MKCT4980

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Molecular monolayers on silicon surfaces.
Lopinski GP and Wayner DDM.
Material Matters, 3(2), 38-38 (2008)
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
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