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647101

Sigma-Aldrich

硅

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

别名:

硅元素

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25 G
¥839.76
100 G
¥2,270.62

¥839.76

国内现货，预计发货时间2025年4月10日详情

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25 G
¥839.76
100 G
¥2,270.62

About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12352300
PubChem化学物质编号:
24883508
NACRES:
NA.23

¥839.76

国内现货，预计发货时间2025年4月10日详情

获取大包装报价

表单

crystalline (cubic (a = 5.4037))
wafer (single side polished)

不包含

dopant

直径× 厚度

2 in. × 0.5 mm

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半导体性质

<111>, N-type

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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此商品
379891P787577310
Periodic acid ACS reagent, 99%

375810

Periodic acid

Periodic acid 99.999% trace metals basis

379891

Periodic acid

Periodic acid ReagentPlus&#174;, &#8805;99.0%

P7875

Periodic acid

Periodic acid puriss. p.a., ACS reagent, crystallized, &#8805;99.0% (RT)

77310

Periodic acid

assay

99%, 99.0-101.0% (ACS specification)

assay

99.999% trace metals basis

assay

≥99.0%

assay

≥99.0% (RT)

Quality Level

200

Quality Level

200

Quality Level

100

Quality Level

200

form

powder or crystals

form

crystals

form

powder or crystals

form

powder or crystals

solubility

water: soluble

solubility

water: soluble

solubility

water: 100 mg/mL, clear, colorless

solubility

water: soluble

mp

122 °C (lit.)

mp

122 °C (lit.)

mp

122 °C (lit.)

mp

122 °C (lit.)

应用


  • 硅光子学和电子学：讨论硅光子学与电子学的集成，与开发高性能计算设备相关，与材料科学和高性能计算研究相(C Xiang et al., 2021。

  • 硅硅 pi 单键：详细介绍了硅的结构化学及其在分子和材料科学中的含义，对关注硅在纳米技术和材料科学中的应用的化学家很有用(S Kyushin et al., 2020)。

物理属性

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 100 - 3000Ωcm。

储存分类代码

13 - Non Combustible Solids

WGK

nwg

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

危险化学品
  • 技术规格说明书

    • 历史批次信息供参考:

    分析证书(COA)

    Lot/Batch Number
    MKCR9666
    MKCN9097
    MKCV6328
    MKCQ9223
    MKCP9285

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    Min Joon Huang et al.
    Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
    In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
    Bo-Soon Kim et al.
    Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
    A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
    Chengyong Li et al.
    Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
    Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
    Jaewoo Lee et al.
    Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
    A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
    Hyunhui Kim et al.
    Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
    Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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