647772
硅
wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
别名:
Silicon element
登录 查看组织和合同定价。
选择尺寸
关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
InChI
1S/Si
SMILES string
[Si]
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
form
crystalline (cubic (a = 5.4037)), wafer (single side polished)
contains
boron as dopant
greener alternative product characteristics
Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.
sustainability
Greener Alternative Product
diam. × thickness
3 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
greener alternative category
semiconductor properties
<111>, P-type
Quality Level
正在寻找类似产品? 访问 产品对比指南
General description
氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm
We are committed to bringing you Greener Alternative Products, which belongs to one of the four categories of greener alternatives. This enabling product has been enhanced for energy efficiency. Click here for more information.
ppe
Eyeshields, Gloves, type N95 (US)
存储类别
11 - Combustible Solids
wgk
nwg
法规信息
新产品
此项目有
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
商品
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
实验方案
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
相关内容
Technical Bulletins
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持