InChI
1S/Si
SMILES string
[Si]
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
assay
100%
form
rod
manufacturer/tradename
Goodfellow 048-149-51
L × diam.
100 mm × 25 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
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Emil Rudobeck et al.
Radiation research, 181(4), 407-415 (2014-03-15)
An unavoidable complication of space travel is exposure to radiation consisting of high-energy charged particles (HZE), such as Fe and Si nuclei. HZE radiation can affect neuronal functions at the level of the synapse or neuronal soma without inducing significant
Yang Gao et al.
Journal of nanoscience and nanotechnology, 14(6), 4469-4474 (2014-04-18)
We have developed a novel method to fabricate micro/nano structure based on the coherent diffraction lithography, and acquired periodic silicon tubular gratings with deep nano-scale tapered profiles at the top part. The optical properties of these tubular gratings were similar
Yanli Wang et al.
Advanced materials (Deerfield Beach, Fla.), 25(37), 5177-5195 (2013-07-06)
Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, structure, morphology, doping, and assembly
Atteq ur Rehman et al.
TheScientificWorldJournal, 2013, 470347-470347 (2014-01-25)
The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type
Taiuk Rim et al.
Journal of nanoscience and nanotechnology, 14(1), 273-287 (2014-04-16)
The interest in biologically sensitive field effect transistors (BioFETs) is growing explosively due to their potential as biosensors in biomedical, environmental monitoring and security applications. Recently, adoption of silicon nanowires in BioFETs has enabled enhancement of sensitivity, device miniaturization, decreasing
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