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  • A novel method to fabricate silicon tubular gratings with broadband antireflection and super-hydrophobicity.

A novel method to fabricate silicon tubular gratings with broadband antireflection and super-hydrophobicity.

Journal of nanoscience and nanotechnology (2014-04-18)
Yang Gao, Tielin Shi, Xianhua Tan, Guanglan Liao
摘要

We have developed a novel method to fabricate micro/nano structure based on the coherent diffraction lithography, and acquired periodic silicon tubular gratings with deep nano-scale tapered profiles at the top part. The optical properties of these tubular gratings were similar to an effective gradient-index antireflective surface, resulting in a broadband antireflective combining super-hydrophobic behavior. The mechanism of the method was simulated by rigorous coupled wave analysis algorithms. Then coherent diffraction lithography by use of suitable mask, in which periodic micro-scale circular opaque patters were distributed, was realized on the traditional aligner. Due to coherent diffraction, we obtained enough light intensity for photoresist exposure under the center of the opaque area in the mask together with transparent areas. The tapered line profiles and hollow photoresist gratings over large areas could be fabricated on the silicon wafer after development. The dry etching process was carried out, and high aspect ratio silicon tubular gratings with deep tapered profiles at the top were fabricated. The optical property and wettability of the structure were verified, proving that the proposed method and obtained micro/nano structure provide application potential in the future.

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硅, powder, −325 mesh, 99% trace metals basis
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
硅, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, pieces, 99.95% trace metals basis
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硅, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
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硅, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
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硅, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Sigma-Aldrich
硅, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
硅, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
硅, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%
硅, rod, 100mm, diameter 12.7mm, single crystal - random orientation, 100%
硅, sheet, 52x52mm, thickness 1.0mm, polycrystalline, 99.999%
硅, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
硅, sheet, 40x40mm, thickness 3.0mm, single crystal, p-type, 100%
硅, rod, 50mm, diameter 2.0mm, crystalline, 100%
硅, rod, 100mm, diameter 25mm, crystalline, 100%
硅, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
硅, rod, 100mm, diameter 2.0mm, crystalline, 100%
硅, rod, 10mm, diameter 2.0mm, crystalline, 100%
硅, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
硅, rod, 100mm, diameter 10.0mm, single crystal - random orientation, 100%
硅, disks, 13mm, thickness 0.38mm, single crystal, 100%