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5 G
¥829.76
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About This Item
经验公式（希尔记法）:
Hf
CAS号:
分子量:
178.49
MDL编号:
UNSPSC代码:
12141718
PubChem化学物质编号:
NACRES:
NA.23
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方案
99.7% trace metals basis
表单
turnings, crystal bar
电阻率
29.6 μΩ-cm, 0°C
沸点
4602 °C (lit.)
mp
2227 °C (lit.)
密度
13.3 g/cm3 (lit.)
SMILES字符串
[Hf]
InChI
1S/Hf
InChI key
VBJZVLUMGGDVMO-UHFFFAOYSA-N
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此商品 | 704105 | 900820 | 900822 |
|---|---|---|---|
| density 1.145 g/mL at 25 °C | density - | density - | density - |
| mp 60 °C (lit.) | mp 56-64 °C, 60 °C (lit.) | mp - | mp - |
| mol wt average Mn 80,000 | mol wt Mn 40,000-50,000, Mw 48,000-90,000, average Mn 45,000 | mol wt - | mol wt - |
| impurities <0.5% water | impurities - | impurities ≤0.5 Residual monomer (GC), ≤0.5% Residual Water content (colormetric titration), ≤100 ppm Tin (AAS) | impurities ≤0.5% Residual monomer (GC), ≤0.5% Residual water content (colormetric titration), ≤100 ppm Tin (AAS) |
| Mw/Mn <2 | Mw/Mn - | Mw/Mn - | Mw/Mn - |
储存分类代码
11 - Combustible Solids
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
法规信息
监管及禁止进口产品
Xuelu Ma et al.
Physical chemistry chemical physics : PCCP, 15(3), 901-910 (2012-12-04)
In this paper, the reaction mechanisms of CO assisted N(2) cleavage and functionalization activated by a dinuclear hafnium complex are studied using a density function theory (DFT) method. Several key intermediates (Ia, Ib, Ic and Id) with axial/equatorial N=C=O coordination
John J Curley et al.
Dalton transactions (Cambridge, England : 2003), 41(1), 192-200 (2011-10-25)
Treatment of Cp*Ir N(t)Bu (1) with the appropriate metallocene equivalent is an effective route for the preparation of the heterobimetallic complexes Cp*Ir(μ-N(t)Bu)MCp(2) (2-M, M = Ti, Zr, Hf). The electronic structures of the isostructural series of compounds, 2-M, are described
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect
José Luis Olivares-Romero et al.
Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)
Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.
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