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Merck
CN

266809

Sigma-Aldrich

turnings, crystal bar, 99.7% trace metals basis

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别名:
Celtium, Hafnium element
经验公式(希尔记法):
Hf
CAS号:
分子量:
178.49
MDL编号:
UNSPSC代码:
12141718
PubChem化学物质编号:
NACRES:
NA.23

质量水平

检测方案

99.7% trace metals basis

形式

turnings, crystal bar

电阻率

29.6 μΩ-cm, 0°C

bp

4602 °C (lit.)

mp

2227 °C (lit.)

密度

13.3 g/cm3 (lit.)

SMILES字符串

[Hf]

InChI

1S/Hf

InChI key

VBJZVLUMGGDVMO-UHFFFAOYSA-N

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WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)

法规信息

监管及禁止进口产品

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Yu Gong et al.
Dalton transactions (Cambridge, England : 2003), 41(38), 11706-11715 (2012-08-18)
The isolated group 4 metal oxydifluoride molecules OMF(2) (M = Ti, Zr, Hf) with terminal oxo groups are produced specifically on the spontaneous reactions of metal atoms with OF(2) through annealing in solid argon. The product structures and vibrational spectra
Christopher C Underwood et al.
Inorganic chemistry, 52(1), 237-244 (2012-12-19)
This paper describes the hydrothermal chemistry of alkali hafnium fluorides, including the synthesis and structural characterization of five new alkali hafnium fluorides. Two ternary alkali hafnium fluorides are described: Li(2)HfF(6) in space group P31m with a = 4.9748(7) Å and
Byung-Hak Moon et al.
Journal of nanoscience and nanotechnology, 11(8), 7428-7432 (2011-11-23)
In this study, we investigated the electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials. The Ti-35Ta-xHf alloys contained from 3 wt.% to 15 wt.% Hf were manufactured by arc melting furnace. The nanotube oxide layers were formed
Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.

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