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Merck
CN

900835

福咪溴铵

greener alternative

≥98%

别名:

Greatcell Solar®, 氢溴酸亚氨基甲胺, 氢溴酸甲脒, 溴化甲脒

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关于此项目

经验公式（希尔记法）:
CH5BrN2
化学文摘社编号:
146958-06-7
分子量:
124.97
UNSPSC Code:
12352101
NACRES:
NA.23
MDL number:
MFCD28369274

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产品名称

福咪溴铵, ≥98%

InChI key

QWANGZFTSGZRPZ-UHFFFAOYSA-N

SMILES string

N=CN.[H]Br

InChI

1S/CH4N2.BrH/c2-1-3;/h1H,(H3,2,3);1H

assay

≥98%

form

powder or crystals

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

greener alternative category

Enabling,

Quality Level

100

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相关类别

Application

有机卤化物基钙钛矿型太阳能电池已经成为太阳能电池的重要材料。 我们的钙钛矿前驱体可用于合成混合的阳离子或阴离子钙钛矿，用于钙钛矿型太阳能电池的带隙、载流子扩散长度和功率转换效率的优化。
甲脒氢溴酸盐可用作太阳能电池中钙钛矿吸附层合成的前体材料。它可用作新型能量储存材料和设备开发和设计中的添加剂或成分。

General description

我们竭诚为您带来绿色替代产品，以确保符合一项或多项绿色化学12项原则要求。该产品为增强型，提高了能源效率。点击此处以获取更多信息。

Legal Information

Greatcell Solar Materials Pty Ltd.的产品Greatcell Solar是 Greatcell Solar Materials Pty Ltd.的注册商标。
Greatcell Solar is a registered trademark of Greatcell Solar

pictograms

Exclamation mark
GHS07

signalword

Warning

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCZ4937
MKCT7189
MKCS6107
MKCP8806
MKCM8534

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Recent Advances in Hybrid Halide Perovskites-based Solar Cells.
Kalyanasundaram K, et al.
Material Matters, 11, 3-3 (2016)
Entropic stabilization of mixed A-cation ABX3 metal halide perovskites for high performance perovskite solar cells.
Yi C, et al.
Energy & Environmental Science, 9, 656-662 (2016)
Photovoltaic mixed-cation lead mixed-halide perovskites: links between crystallinity, photo-stability and electronic properties.
Rehman W, et al.
Energy & Environmental Science, 10, 361-369 (2017)
Zhiping Wang et al.
Advanced materials (Deerfield Beach, Fla.), 29(5), 1604186-1604186 (2016-12-03)
Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH

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