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方案
97%
表单
solid
mp
>300 °C
λmax
524, 488 nm
半导体性质
N-type (mobility=0.1-2.1 cm2/V·s)
SMILES字符串
CCCN1C(=O)c2ccc3c4ccc5C(=O)N(CCC)C(=O)c6ccc(c7ccc(C1=O)c2c37)c4c56
InChI
1S/C30H22N2O4/c1-3-13-31-27(33)19-9-5-15-17-7-11-21-26-22(30(36)32(14-4-2)29(21)35)12-8-18(24(17)26)16-6-10-20(28(31)34)25(19)23(15)16/h5-12H,3-4,13-14H2,1-2H3
InChI key
GEIYCUVJOKJQPO-UHFFFAOYSA-N
一般描述
应用
Excellent candidates as electron accepting building blocks for organic photovoltaics (OPVs).
警示用语:
Warning
危险声明
危险分类
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
商品
Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.
Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.
Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.
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