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质量水平
方案
99.995% trace metals basis
表单
solid
自燃温度
860 °F
反应适用性
core: titanium
电阻率
42.0 μΩ-cm, 20°C
直径× 厚度
2.00 in. × 0.25 in.
沸点
3287 °C (lit.)
mp
1660 °C (lit.)
密度
4.5 g/mL at 25 °C (lit.)
SMILES字符串
[Ti]
InChI
1S/Ti
InChI key
RTAQQCXQSZGOHL-UHFFFAOYSA-N
应用
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition.
储存分类代码
11 - Combustible Solids
WGK
nwg
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
监管及禁止进口产品
Kostantinidis, S.; et al.
The European Physical Journal - Applied Physics, 56, 24002/1-24002/1 (2011)
Helmersson; U.; et al.
Thin Solid Films, 513, 1-1 (2006)
A Kurbad et al.
International journal of computerized dentistry, 16(2), 125-141 (2013-08-13)
This article presents two novel options for lithium-disilicate restorations supported by single-tooth implants. By using a Ti-Base connector, hybrid abutments and hybrid abutment crowns can be fabricated for different implant systems. The latter option in particular is an interesting new
J H Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 4601-4607 (2013-08-02)
Nanocytalline TiN films were deposited on non-alkali glass and Al substrates by reactive DC magnetron sputtering (DCMS) with an electromagnetic field system (EMF). The microstructure and corrosion resistance of the TiN-coated Al substrates were estimated by X-ray diffraction (XRD), scanning
Jinho Shin et al.
Journal of nanoscience and nanotechnology, 13(8), 5807-5810 (2013-07-26)
In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface
商品
Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
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