648663
双(乙基环戊二烯)钌(II)
别名:
二乙基二茂钌
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关于此项目
线性分子式:
C7H9RuC7H9
化学文摘社编号:
分子量:
287.36
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
MDL number:
InChI
1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;
SMILES string
[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2
InChI key
VLTZUJBHIUUHIK-UHFFFAOYSA-N
form
liquid
composition
Ru, 33.9-36.4% gravimetric
reaction suitability
core: ruthenium
reagent type: catalyst
refractive index
n20/D 1.5870 (lit.)
bp
100 °C/0.01 mmHg (lit.)
mp
6 °C (lit.)
density
1.3412 g/mL at 25 °C (lit.)
storage temp.
−20°C
Quality Level
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Application
Bis(ethylcyclopentadienyl)ruthenium can be used:
- A precursor to synthesize ruthenium films via the atomic layer deposition (ALD) method.
- A precursor to synthesize ruthenium thin films on substrates such as SiO2 via plasma enhanced atomic layer deposition (PEALD) method.
- A metal-organic precursor in the chemical vapor deposition (CVD) process to deposit ruthenium (Ru) thin films suitable for applications like capacitor electrodes in microelectronics.
- A precursor to prepare ultrathin ruthenium (Ru) films via the atomic layer deposition (ALD) and selective etching techniques.
Features and Benefits
Bis(ethylcyclopentadienyl)ruthenium(II) exhibits:
- High Volatility: Suitable for gas-phase delivery in Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD).
- Thermal Stability: Stable under typical ALD/CVD processing temperatures
General description
Bis(ethylcyclopentadienyl)ruthenium(II) is a organometallic compound widely used as a catalyst and as a precursor for thin-film deposition. It is valued for its high thermal stability, volatility, and efficiency in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to create high-purity ruthenium and ruthenium oxide films. This compound plays a crucial role in microelectronics, catalysis, and energy materials.
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
10 - Combustible liquids
wgk
WGK 3
flash_point_f
>199.9 °F - closed cup
flash_point_c
> 93.3 °C - closed cup
ppe
Eyeshields, Gloves, type ABEK (EN14387) respirator filter
In-situ real-time ellipsometric investigations during the atomic layer deposition of ruthenium: A process development from [(ethylcyclopentadienyl)(pyrrolyl) ruthenium] and molecular oxygen.
Knaut M, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 30(1), 01A151-01A151 (2012)
Growth and characterization of the coexistence of vertically aligned and twinned V-shaped RuO2 nanorods on nanostructural TiO2 template
Chen CA, et al.
J. Alloy Compounds, 485(1-2), 524-528 (2009)
Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru (EtCp) 2
Smirnova, EA and Miakonkikh, et.al.
Journal of Physics. Conference Series, 2086, 012209-012209 (2021)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Waechtler T, et al.
Microelectronic Engineering, 88(5), 684-689 (2011)
Growth mechanism of Ru films prepared by chemical vapor deposition using bis (ethylcyclopentadienyl) ruthenium precursor
Matsui, Yuichi and Hiratani, et al.
Electrochemical and Solid-State Letters, 4, C9-C9 (2001)
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