推荐产品
等级
electronic grade
质量水平
方案
≥99.998% chemical purity basis
表单
gas
杂质
≤50 ppm Higher silanes
<0.2 ppm Chlorosilanes
<1 ppm Argon (Ar) + Oxygen (O2)
<1 ppm Carbon dioxide (CO2)
<1 ppm Nitrogen (N2)
<1 ppm THC
<1 ppm Water
<5 ppm Siloxanes
沸点
−14.5 °C (lit.)
mp
−132.6 °C (lit.)
转变温度
critical temperature 150.9 °C
SMILES字符串
[SiH3][SiH3]
InChI
1S/H6Si2/c1-2/h1-2H3
InChI key
PZPGRFITIJYNEJ-UHFFFAOYSA-N
一般描述
Atomic number of base material: 14 Silicon
应用
外延硅和硅基电介质快速低温沉积的前体。
特点和优势
通过快速低温化学气相沉积 (LTCVD)，本品可用于无定形硅、外延硅和硅基电介质的沉积。通过分子束外延 (MBE)，与锗的固体原料相结合，还可用于硅锗薄膜的外延生长。外延硅和硅基电介质快速低温沉积的前体。
警示用语：
Danger
危险分类
Acute Tox. 4 Dermal - Eye Irrit. 2 - Flam. Gas 1B - Press. Gas Liquefied gas - Resp. Sens. 1 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
2A - Gases
WGK
WGK 3
闪点(°F)
<50.0 °F - closed cup
闪点(°C)
< 10 °C - closed cup
个人防护装备
Eyeshields, Faceshields, Gloves, multi-purpose combination respirator cartridge (US)
法规信息
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