424838
三苯基氢化锗
别名:
三苯基锗, 三苯基锗基氢化物
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关于此项目
线性分子式:
(C6H5)3GeH
化学文摘社编号:
分子量:
304.96
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
220-569-0
MDL number:
form
powder or crystals, solid
reaction suitability
core: germanium, reagent type: reductant
mp
40-43 °C (lit.)
InChI key
NXHORDQDUDIXOS-UHFFFAOYSA-N
InChI
1S/C18H16Ge/c1-4-10-16(11-5-1)19(17-12-6-2-7-13-17)18-14-8-3-9-15-18/h1-15,19H
SMILES string
c1ccc(cc1)[GeH](c2ccccc2)c3ccccc3
Quality Level
General description
三苯基氢化锗是氢供体。
Application
它可用于（Z）烯烃的异构化。1 TEMPO（2，2，6，6-四甲基哌啶基氧基）与三苯基氢化锗反应形成其相应的三氢锗基自由基。2
Packaging
玻璃瓶封装
signalword
Warning
hcodes
Hazard Classifications
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Vanessa A Béland et al.
Chemistry (Weinheim an der Bergstrasse, Germany), 26(56), 12751-12757 (2020-04-16)
The development of batteries and fuel cells has brought to light a need for carbon anode materials doped homogeneously with electrocatalytic metals. In particular, combinations of electrocatalysts in carbon have shown promising activity. A method to derive functional carbon materials
Palladium (II)-catalyzed isomerization of olefins with tributyltin hydride.
Kim IS, et al.
The Journal of Organic Chemistry, 73(14), 5424-5426 (2007)
Grace Flynn et al.
Nano letters, 16(1), 374-380 (2015-12-18)
Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent
Theresia Ahrens et al.
Dalton transactions (Cambridge, England : 2003), 45(11), 4716-4728 (2016-02-11)
The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl complex [Rh(GePh3)(PEt3)3] (3). Alternatively, treatment of the methyl complex [Rh(CH3)(PEt3)3] (4) with HGePh3 furnished
E Mullane et al.
Physical chemistry chemical physics : PCCP, 17(10), 6919-6924 (2015-02-14)
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point
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