339180
乙氧基锗
≥99.95% trace metals basis
别名:
四乙氧基锗
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关于此项目
线性分子式:
Ge(OC2H5)4
化学文摘社编号:
分子量:
252.88
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
EC Number:
238-007-8
Beilstein/REAXYS Number:
3661173
MDL number:
产品名称
乙氧基锗, ≥99.95% trace metals basis
InChI key
GXMNGLIMQIPFEB-UHFFFAOYSA-N
InChI
1S/C8H20GeO4/c1-5-10-9(11-6-2,12-7-3)13-8-4/h5-8H2,1-4H3
SMILES string
CCO[Ge](OCC)(OCC)OCC
assay
≥99.95% trace metals basis
form
liquid
reaction suitability
core: germanium
reagent type: catalyst
impurities
≤0.01% Si
refractive index
n20/D 1.407 (lit.)
density
1.14 g/mL at 25 °C (lit.)
Quality Level
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Other Notes
含有甲苯
Application
Germanium(IV) ethoxide can be used as:
- A precursor in the synthesis of germanium oxide nanostructures via photonic curing.
- A key dopant precursor in the synthesis of Ge-doped hematite photoanodes for enhancing charge separation efficiency in photoelectrochemical water splitting.
- A germanium source to synthesize the bismuth germanate via the sol-gel process, to develop uniform thin films suitable for advanced applications.
General description
Germanium(IV) ethoxide is a high-purity, colorless to pale yellow liquid organometallic compound with a trace metal purity of ≥99.95%. It is widely used as a catalyst and a precursor for solution-based and vapor-phase deposition processes, such as sol-gel synthesis, chemical vapor deposition (CVD), and atomic layer deposition (ALD). Its excellent volatility, reactivity, and metal-organic composition make it suitable for producing high-quality germanium-containing films, coatings, and nanostructures in electronics, optics, and semiconductor industries.
signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
3 - Flammable liquids
wgk
WGK 3
flash_point_f
120.0 °F - closed cup
flash_point_c
48.9 °C - closed cup
ppe
Eyeshields, Faceshields, Gloves, type ABEK (EN14387) respirator filter
法规信息
危险化学品
此项目有
Non-Cryst. Solids, 168, 195-195 (1994)
Mat. Res. Soc. Symp. Proc., 73, 443-443 (1986)
Sol-gel processing of bismuth germanate thin-films
Secu, Mihail and Secu, et al.
Coatings, 10, 255-255 (2020)
Ideal dopant to increase charge separation efficiency in hematite photoanodes: germanium
de Matos Rodrigues, et al.
Journal of Materials Chemistry, 10, 13456-13466 (2022)
Synthesis of Silicon and Germanium Oxide Nanostructures via Photonic Curing; a Facile Approach to Scale Up Fabrication
Khatoon, Najma and Subedi, et al.
ChemistryOpen, 13, e202300260-e202300260 (2014)
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