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Merck
CN

255475

Sigma-Aldrich

氮化硼试剂

powder, ~1 μm, 98%

别名:

Boron mononitride, Hexagonal boron nitride, White graphite

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About This Item

线性分子式:
BN
CAS号:
分子量:
24.82
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23

质量水平

方案

98%

表单

powder

粒径

~1 μm

密度

2.29 g/mL at 25 °C (lit.)

SMILES字符串

B#N

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

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一般描述

六方氮化硼(hBN)具有类似于石墨的层状结构,并且可以作为单层BN片剥离。hBN应用于催化剂、光电子和半导体器件等领域。氮化硼在300K时具有约400W/mK的高导热率。

应用

六角形氮化硼粉末已用于:
  • 单层氮化硼量子点的制备和发光研究。
  • 稀土硼配合物。
  • 氮化硼填充的聚苯并恶嗪系统,作为用于电子封装应用的导热模塑组件。
  • 含硼陶瓷制品。
  • 作为形成BN纳米管的原料。
  • 已有对加载硅橡胶及其对热、机械和形态特性的连续影响进行了研究。

储存分类代码

13 - Non Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves


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Augustinus Stijn M Goossens et al.
Nano letters, 12(9), 4656-4660 (2012-08-22)
We report on the fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned such that
A solid-state process for formation of boron nitride nanotubes
Chen Y, et al.
Applied Physics Letters, 74(20) (1999)
Ki Kang Kim et al.
ACS nano, 6(10), 8583-8590 (2012-09-14)
Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed
A Erba et al.
The Journal of chemical physics, 138(5), 054906-054906 (2013-02-15)
The vibration spectrum of single-walled zigzag boron nitride (BN) nanotubes is simulated with an ab initio periodic quantum chemical method. The trend towards the hexagonal monolayer (h-BN) in the limit of large tube radius R is explored for a variety
Vibro-fluidization of fine boron nitride powder at low pressure Jeffrey R. Wank, et al., Powder technology
Wank JR, et al.
Powder Technology, 121, 195-204 (2001)

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