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Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

Characterization of planar pn heterojunction diodes constructed with Cu2O nanoparticle films and single ZnO nanowires.

Journal of nanoscience and nanotechnology (2013-07-19)

Kiyeol Kwak, Kyoungah Cho, Sangsig Kim

摘要

In this study, we fabricate planar pn heterojunction diodes composed of Cu2O nanoparticle (NP) films and single ZnO nanowires (NWs) on SiO2 (300 nm)/Si substrates and investigate their characteristics in the dark and under the illumination of white light and 325 nm wavelength light. The diode at bias voltages of +/- 1 V shows rectification ratios of 10 (in the dark) and 34 (under the illumination of white light). On the other hand, the diode exposed to the 325 nm wavelength light exhibits Ohmic characteristics which are associated with efficient photocurrent generation in both the Cu2O NP film and the single ZnO NW.

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氧化锌, ReagentPlus^®, powder, <5 μm particle size, 99.9%

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氧化锌, nanopowder, <100 nm particle size

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氧化锌, puriss. p.a., ACS reagent, ≥99.0% (KT)

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氧化铜, nanopowder, <50 nm particle size (TEM)

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铜, powder, 99.99% trace metals basis

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氧化铜, ACS reagent, ≥99.0%

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氧化铜, powder, <10 μm, 98%

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铜, foil, thickness 0.25 mm, 99.98% trace metals basis

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氧化锌, nanopowder, <50 nm particle size (BET), >97%

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铜, powder, <425 μm, 99.5% trace metals basis

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氧化锌，分散体, nanoparticles, <100 nm particle size (TEM), ≤40 nm avg. part. size (APS), 20 wt. % in H₂O

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