推荐产品
质量水平
产品线
ReagentPlus®
方案
≥99.5%
表单
crystals
反应适用性
reagent type: catalyst
core: molybdenum
mp
795 °C (lit.)
痕量阳离子
NH4+: ≤0.02%
SMILES字符串
O=[Mo](=O)=O
InChI
1S/Mo.3O
InChI key
JKQOBWVOAYFWKG-UHFFFAOYSA-N
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应用
LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼,Pr4Mo9018,其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。
法律信息
ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany
警示用语:
Warning
危险声明
危险分类
Carc. 2 - Eye Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
11 - Combustible Solids
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
从最新的版本中选择一种:
分析证书(COA)
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
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