M0753
氧化钼(VI)
ReagentPlus®, ≥99.5%
别名:
三氧化钼
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关于此项目
线性分子式:
MoO3
化学文摘社编号:
分子量:
143.94
NACRES:
NA.55
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-204-7
MDL number:
eCl@ss:
38180807
Assay:
≥99.5%
Form:
crystals
InChI key
JKQOBWVOAYFWKG-UHFFFAOYSA-N
InChI
1S/Mo.3O
SMILES string
O=[Mo](=O)=O
product line
ReagentPlus®
assay
≥99.5%
form
crystals
reaction suitability
reagent type: catalyst
core: molybdenum
mp
795 °C (lit.)
cation traces
NH4+: ≤0.02%
Quality Level
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Application
LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼，Pr4Mo9018，其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。
Legal Information
ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany
signalword
Warning
hcodes
Hazard Classifications
Carc. 2 - Eye Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
Efficient single-layer polymer light-emitting diodes.
Dinesh Kabra et al.
Advanced materials (Deerfield Beach, Fla.), 22(29), 3194-3198 (2010-06-22)
S W Liu et al.
Optics express, 19(5), 4513-4520 (2011-03-04)
We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique
Zongyou Yin et al.
ACS nano, 6(1), 74-80 (2011-12-15)
A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or
Tailored 3D interface for efficiency improvement in encapsulation-free hybrid light-emitting diodes.
Eugenia Martínez-Ferrero et al.
ACS applied materials & interfaces, 3(9), 3248-3251 (2011-08-03)
The modification of the planar organic/inorganic interface of the hybrid light-emitting diodes by the addition of a tailored nanoporous crystalline metal oxide increases up to 1 order of magnitude the efficiency of the resulting devices. In this Letter, we present
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
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