跳转至内容
Merck
CN

M0753

Sigma-Aldrich

氧化钼(VI)

ReagentPlus®, ≥99.5%

别名:

三氧化钼

登录查看公司和协议定价


About This Item

线性分子式:
MoO3
CAS号:
分子量:
143.94
EC 号:
MDL编号:
UNSPSC代码:
12352303
PubChem化学物质编号:
NACRES:
NA.55
方案:
≥99.5%
表单:
crystals

质量水平

产品线

ReagentPlus®

方案

≥99.5%

表单

crystals

反应适用性

reagent type: catalyst
core: molybdenum

mp

795 °C (lit.)

痕量阳离子

NH4+: ≤0.02%

SMILES字符串

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

正在寻找类似产品? 访问 产品对比指南

应用

LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼,Pr4Mo9018,其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。

法律信息

ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany

象形图

Health hazardExclamation mark

警示用语:

Warning

危险声明

危险分类

Carc. 2 - Eye Irrit. 2 - STOT SE 3

靶器官

Respiratory system

储存分类代码

11 - Combustible Solids

WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable


从最新的版本中选择一种:

分析证书(COA)

Lot/Batch Number

没有发现合适的版本?

如果您需要特殊版本,可通过批号或批次号查找具体证书。

已有该产品?

在文件库中查找您最近购买产品的文档。

访问文档库

Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
Di-Yan Wang et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to

我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.

联系技术服务部门