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Merck
CN

IRMM645

硫-32S 溶液

IRMM®, certified reference material, Spike Isotopic Reference Material

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About This Item

经验公式(希尔记法):
32S
CAS号:
分子量:
31.97
MDL编号:
UNSPSC代码:
41116107
PubChem化学物质编号:
NACRES:
NA.24

等级

certified reference material

Agency

IRMM®

同位素纯度

 32S

制造商/商品名称

JRC

浓度

371.96 μmol/kg±0.57 μmol/kg 32S in 2.8 M HNO3

应用

general analytical

格式

single component solution

质量偏移

depleted

SMILES字符串

[32S]

InChI

1S/S/i1+0

InChI key

NINIDFKCEFEMDL-IGMARMGPSA-N

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分析说明

For more information please see:
IRMM645

法律信息

IRMM is a registered trademark of European Commission

象形图

CorrosionExclamation mark

警示用语:

Danger

危险声明

危险分类

Acute Tox. 4 Inhalation - Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B

补充剂危害

WGK

WGK 1

法规信息

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分析证书(COA)

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Beata Olas et al.
Chemico-biological interactions, 220, 20-24 (2014-06-15)
Hydrogen sulfide (H2S) is a well known toxic gas at high levels. However, at physiological levels, H2S may play a role in the pathogenesis of various cardiovascular diseases. The objective was to study the effects of exogenous H2S on the
Sudhanshu S Pawar et al.
Bioresource technology, 169, 677-685 (2014-08-12)
Caldicellulosiruptor saccharolyticus has gained reputation as being among the best microorganisms to produce H2 due to possession of various appropriate features. The quest to develop an inexpensive cultivation medium led to determine a possible replacement of the expensive component cysteine
Juan Chen et al.
PloS one, 9(9), e105400-e105400 (2014-09-03)
Hydrogen sulfide (H2S), as a potential gaseous messenger molecule, has been suggested to play important roles in a wide range of physiological processes in plants. The aim of present study was to investigate which set of proteins is involved in
Jean-Roch Mouret et al.
Journal of agricultural and food chemistry, 63(12), 3271-3278 (2015-03-13)
The knowledge of gas-liquid partitioning of aroma compounds during winemaking fermentation could allow optimization of fermentation management, maximizing concentrations of positive markers of aroma and minimizing formation of molecules, such as hydrogen sulfide (H2S), responsible for defects. In this study
Dae-Hwan Kim et al.
Nanoscale, 6(23), 14549-14554 (2014-10-29)
A high-quality Sb₂S₃ thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb₂S₃ absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very

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