General description
ZnO is a semiconductor with a wide band gap. Point defects in the structure define the electrical conductivity of the oxide. Doping these point defects with Al, In and Ga gives in a highly conductive n –type zinc oxide. Defect free ZnO can also be achieved by annealing the oxide in reducing environment. It also exhibits excellent optical transmission properties. Doped ZnO can form transparent conductors which may be useful in various energy-based applications.1
Application
用于制备NaZnSiO3OH，一种新型手性骨架材料，其在离子交换、吸附或催化方面具有潜在的应用价值。
signalword
Warning
hcodes
pcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 1
存储类别
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves
法规信息
新产品
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Hyeong Pil Kim et al.
Journal of nanoscience and nanotechnology, 13(7), 5142-5147 (2013-08-02)
Solution processed cathode organic photovoltaic cells (OPVs) utilizing thin layer of ZnO with 27% increase in power conversion efficiency (PCE) to control devices have been demonstrated. Devices without the presence of ZnO layer have much lower PCE than the ones
Xiaolong Li et al.
Journal of nanoscience and nanotechnology, 13(8), 5859-5863 (2013-07-26)
In this study, we present the synthesis of ZnO nanowire by hydrothermal process through reutilization of sludge from soy sauce wastewater electrochemical treatment. The influences of floc content and caramel pigment concentration on the morphologies of ZnO were studied. The
Chia-Chi Wang et al.
Journal of nanoscience and nanotechnology, 13(6), 3880-3888 (2013-07-19)
Zinc oxide nanoparticles (nano-ZnO) are one of the most commonly used nanomaterials in industrial products including paints, cosmetics, and medical materials. Since ZnO is a well-known photocatalyst, it is important to further study if nano-ZnO cause phototoxic effect on skin
Jeongmin Kang et al.
Journal of nanoscience and nanotechnology, 13(5), 3526-3528 (2013-07-19)
ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in
Min Su Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3582-3585 (2013-07-19)
Metal catalyst-free ZnO nanorods were grown on PS with buffer layers grown at 450 degrees C by plasma-assisted molecular beam epitaxy. Room temperature and temperature-dependent photoluminescence were carried out to investigate the optical properties of the ZnO nanorods with the
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