InChI key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
InChI
1S/CSi/c1-2
SMILES string
[C-]#[Si+]
grade
CP
reaction suitability
reagent type: catalyst
core: silicon
availability
available only in Japan
mp
2700 °C (lit.)
density
3.22 g/mL at 25 °C (lit.)
法规信息
新产品
此项目有
Width-tunable graphene nanoribbons on a SiC substrate with a controlled step height.
Qingsong Huang et al.
Advanced materials (Deerfield Beach, Fla.), 25(8), 1144-1148 (2012-12-13)
Mengning Ding et al.
ACS applied materials & interfaces, 5(6), 1928-1936 (2013-02-23)
A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures-nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na2SiO3) solution. The resulting
Dejian Dai et al.
Nanotechnology, 24(2), 025201-025201 (2012-12-15)
We report giant fluorescence enhancement in SiC nanocrystals (NCs) embedded in a sodium dodecyl sulfonate dielectric medium by proximately contacted Ag nanoparticles. The enhancement in integrated fluorescence intensity reaches an astonishing 176-fold under 360 nm excitation (53.3-fold enhancement in emission maximum
Tae-Eon Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3307-3312 (2013-07-19)
Polycabosilane (PCS) could be spun to form fiber web by electrospinning PCS solution in 30% dimethylformide (DMF)/toluene solvent at 25 kV. The electrospun web is stabilized at 200 degrees C for 1 hour to connect fibers by softening PCS webs
Simone Taioli et al.
The Journal of chemical physics, 138(4), 044701-044701 (2013-02-08)
In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical
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