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经验公式(希尔记法):
C42H28
化学文摘社编号:
分子量:
532.67
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
EC Number:
208-242-0
Beilstein/REAXYS Number:
1917339
MDL number:
产品名称
红荧烯, powder
InChI key
YYMBJDOZVAITBP-UHFFFAOYSA-N
InChI
1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H
SMILES string
c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25
form
powder
mp
330-335 °C (lit.)
λmax
299 nm
OLED device performance
ITO/CuPc/NPD/Alq3:Rubrene (5%): DCM2 (2%)/Alq3/Mg:In
ITO/PEDOT:PSS/EHCz:Rubrene (1 wt%)/Cs2CO3:ITO
Quality Level
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Application
用于化学发光研究和过渡金属络合物形成的试剂。
用于化学发光研究和过渡金属络合物形成的试剂。
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
Inorganic Chemistry, 32, 1078-1078 (1993)
Rui M Pinto et al.
Journal of the American Chemical Society, 137(22), 7104-7110 (2015-05-21)
Exciton diffusion is at the heart of most organic optoelectronic devices' operation, and it is currently the most limiting factor to their achieving high efficiency. It is deeply related to molecular organization, as it depends on intermolecular distances and orbital
Yuanzhen Chen et al.
Advanced materials (Deerfield Beach, Fla.), 23(45), 5370-5375 (2011-10-18)
Commonly observed variations in photoluminescence (PL) spectra of crystalline organic semiconductors, including the appearance or enhancement of certain PL bands, are shown to originate from a small amount of structural disorder (e.g., amorphous inclusions embedded in a crystal), rather than
Fang Gao et al.
The journal of physical chemistry. A, 113(46), 12847-12856 (2009-10-14)
We present a theoretical study on the temperature-dependent absorption and photoluminescence spectroscopy of rubrene multichromophores by combining the time-dependent long-range-corrected density functional theory with the exciton model. The spectra of rubrene multichromophores up to heptamers are calculated, and the effects
Y Chen et al.
Advanced materials (Deerfield Beach, Fla.), 24(20), 2679-2684 (2012-04-14)
The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the
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