InChI
1S/Be
SMILES string
[Be]
InChI key
ATBAMAFKBVZNFJ-UHFFFAOYSA-N
assay
99.7%
form
wire
autoignition temp.
1198 °F
manufacturer/tradename
Goodfellow 588-779-48
resistivity
4.46 μΩ-cm, 20°C
L × diam.
0.1 m × 0.356 mm
bp
2970 °C (lit.)
mp
1278 °C (lit.)
density
1.85 g/mL at 25 °C (lit.)
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General description
For updated SDS information please visit www.goodfellow.com.
Legal Information
Product of Goodfellow
signalword
Danger
Hazard Classifications
Acute Tox. 3 Oral - Carc. 1B - Eye Irrit. 2 - Skin Irrit. 2 - Skin Sens. 1 - STOT RE 1
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
法规信息
新产品
此项目有
Linus H Santo Tomas
Current opinion in pulmonary medicine, 15(2), 165-169 (2009-06-18)
This review aims to present the clinician with a synthesis of recent studies that have enhanced our understanding of the epidemiology and pathogenesis of beryllium hypersensitivity (BeH) and chronic beryllium disease (CBD). Lower occupational limit levels to beryllium exposure and
John R Balmes et al.
American journal of respiratory and critical care medicine, 190(10), e34-e59 (2014-11-15)
Beryllium continues to have a wide range of industrial applications. Exposure to beryllium can lead to sensitization (BeS) and chronic beryllium disease (CBD). The purpose of this statement is to increase awareness and knowledge about beryllium exposure, BeS, and CBD.
T Mark McCleskey et al.
Journal of occupational and environmental hygiene, 6(12), 751-757 (2009-11-07)
We compare beryllium to H+ and show that beryllium can displace H+ in many "strong hydrogen bonds" where Be as a "tetrahedral proton" (O-Be-O angle is tetrahedral as opposed to the nearly linear O-H-O angle) is thermodynamically preferred. The strong
Elijah Thimsen et al.
Nature communications, 5, 5822-5822 (2014-12-20)
Thin films comprising semiconductor nanocrystals are emerging for applications in electronic and optoelectronic devices including light emitting diodes and solar cells. Achieving high charge carrier mobility in these films requires the identification and elimination of electronic traps on the nanocrystal
L Mangin-Thro et al.
Nature communications, 6, 7705-7705 (2015-07-04)
The pseudo-gap phenomenon in copper oxide superconductors is central to any description of these materials as it prefigures the superconducting state itself. A magnetic intra-unit-cell order was found to occur just at the pseudo-gap temperature in four cuprate high-Tc superconducting
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