方案
99%
表单
wire
自燃温度
1198 °F
制造商/商品名称
Goodfellow 414-307-87
电阻率
4.46 μΩ-cm, 20°C
长度 × 直径
0.05 m × 0.85 mm
沸点
2970 °C (lit.)
mp
1278 °C (lit.)
密度
1.85 g/mL at 25 °C (lit.)
SMILES字符串
[Be]
InChI
1S/Be
InChI key
ATBAMAFKBVZNFJ-UHFFFAOYSA-N
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一般描述
For updated SDS information please visit www.goodfellow.com.
法律信息
Product of Goodfellow
警示用语：
Danger
危险分类
Acute Tox. 3 Oral - Carc. 1B - Eye Irrit. 2 - Skin Irrit. 2 - Skin Sens. 1 - STOT RE 1
储存分类代码
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
新产品
Shaodong Dai et al.
Current opinion in immunology, 25(6), 775-780 (2013-08-28)
Chronic beryllium disease (CBD) is a granulomatous lung disorder caused by a hypersensitivity to beryllium and characterized by the accumulation of beryllium-specific CD4(+) T cells in the lung. Genetic susceptibility to beryllium-induced disease is strongly associated with HLA-DP alleles possessing
Paolo Boffetta et al.
Critical reviews in toxicology, 42(2), 107-118 (2012-01-27)
There is controversy on whether occupational exposure to beryllium causes lung cancer. We conducted a systematic review of epidemiologic studies on cancer among workers exposed to beryllium, including a study of seven U.S. production plants which has been recently updated
Massimo Amicosante et al.
Clinical immunology (Orlando, Fla.), 121(2), 134-143 (2006-05-16)
Chronic beryllium disease (CBD) is a granulomatous lung disorder caused by beryllium exposure in the workplace and is characterized by the accumulation of beryllium-specific CD4(+) T cells. Depending on genetic susceptibility and the nature of the exposure, CBD occurs in
T Mark McCleskey et al.
Journal of occupational and environmental hygiene, 6(12), 751-757 (2009-11-07)
We compare beryllium to H+ and show that beryllium can displace H+ in many "strong hydrogen bonds" where Be as a "tetrahedral proton" (O-Be-O angle is tetrahedral as opposed to the nearly linear O-H-O angle) is thermodynamically preferred. The strong
Elijah Thimsen et al.
Nature communications, 5, 5822-5822 (2014-12-20)
Thin films comprising semiconductor nanocrystals are emerging for applications in electronic and optoelectronic devices including light emitting diodes and solar cells. Achieving high charge carrier mobility in these films requires the identification and elimination of electronic traps on the nanocrystal
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