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描述
Bandgap: 5.97 eV
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Monolayer h-BN
Orientation: <1-0-0>
Raman Peak: 1370 /cm-1
Substrate Type/Doping: P/B
hBN Coverage: 100% with sporadic adlayers
质量水平
电阻率
5-30 Ω-cm
直径
200 mm (8 in.)
厚度
300 nm , Oxide
725 ± 25 μm , Wafer
晶粒度
>4 μm
SMILES字符串
B#N
InChI
1S/BN/c1-2
InChI key
PZNSFCLAULLKQX-UHFFFAOYSA-N
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应用
Monolayer hexagonal boron nitride (h-BN), also known as “white graphene”, is a wide-bandgap 2D crystal (~6 eV that can be tuned to ~2 eV) with exceptional strength , large oxidation resistance at high temperatures , and optical functionalities . Among its potential applications are:
- Two-dimensional electronics
- Nanophotonic and other optoelectronic devices
- Quantum communication and information science
- Aerospace industry
- MEMS and NEMS
- Micro-/nano- actuators
- nsulating/transparent coatings
储存及稳定性
To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.
储存分类代码
13 - Non Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
新产品
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Ba K, et al.
Scientific Reports, 7 (2017)
Hexagonal boron nitride nanomechanical resonators with spatially visualized motion
Zheng X, et al
Microsystems & Nanoengineering (2017)
Monolayer to Bulk Properties of Hexagonal Boron Nitride
Wickramaratne D, et al.
Physical Chemistry, 122, 25524 25529-25524 25529 (2018)
From 2-D to 0-D Boron Nitride Materials, The Next Challenge
Stagi L, et al.
Materials, 12(23) (2019)
Piezoelectricity in Monolayer Hexagonal Boron Nitride
Ares P, et al.
Advanced Materials, 32 (2020)
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