InChI
1S/GeH/h1H
SMILES string
[GeH4]
InChI key
ROUHNNRKLNITEM-UHFFFAOYSA-N
form
powder
Application
GeH是一种范德华材料，可用于电子、光电、传感和能量转换等多种应用。
General description
Germanane（GeH）是2D石墨烷类似物，直接带隙为1.6 eV，电子迁移率为18000 cm2V-1s-1。它是一种氢终止的锗（Ge），可以通过CaGe2晶体的拓扑脱嵌来合成。其晶体结构包含具有与每个Ge原子共价连接的氢原子的六角形Ge晶格。
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Improving the stability and optical properties of germanane via one-step covalent methyl-termination
Jiang S, et al.
Nature Communications, 5(2), 3389-3389 (2014)
Electronic properties of germanane field-effect transistors
Madhushankar BN, et al.
2d materials, 4(2), 021009-021009 (2017)
The structure and amorphization of germanane
Jiang S, et al.
Journal of Material Chemistry C, 2(17), 3185-3188 (2014)
Large area epitaxial germanane for electronic devices
Amamou W, et al.
2d materials, 2(3), 035012-035012 (2015)
Elisabeth Bianco et al.
ACS nano, 7(5), 4414-4421 (2013-03-20)
Graphene's success has shown not only that it is possible to create stable, single-atom-thick sheets from a crystalline solid but that these materials have fundamentally different properties than the parent material. We have synthesized for the first time, millimeter-scale crystals
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