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Merck
CN
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主要文件

901625

Sigma-Aldrich

Buffered oxide etchant (BOE) 10:1 with surfactant

别名:

BHF, Buffered HF

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About This Item

UNSPSC代码:
12161700
NACRES:
NA.23

表单

liquid

一般描述

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

应用

Buffered oxide etchant (BOE) 10:1 with surfactant can be potentially used in the etching of titanium carbide, which is used in the fabrication of microelectromechanical systems (MEMS). It may be used in the etching of spin-on-dopant (SOD) for the development of conductor-insulator-conductor tunneling diodes. It may also be used to enhance the surface of fused quartz devices.

象形图

Skull and crossbonesCorrosion

警示用语:

Danger

危险分类

Acute Tox. 2 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1B

储存分类代码

6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 2

闪点(°F)

Not applicable

闪点(°C)

Not applicable


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Study on surface roughness improvement of Fused Quartz after thermal and chemical post-processing
2016 IEEE International Symposium on Inertial Sensors and Systems, 31(8), 101-104 (2016)
Integration of wear-resistant titanium carbide coatings into MEMS fabrication processes
Radhakrishnan G, et al.
Tribology Letters, 8(2-3), 133-137 (2000)
New process development for planar-type CIC tunneling diodes
Choi K, et al.
IEEE Electron Device Letters, 31(8), 809-811 (2010)

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