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Merck
CN
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文件

771503

Sigma-Aldrich

Indeno[1,2-b]fluorene-6,12-dione

99%

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别名:
trans-Fluorenacenedione, Indenofluorenedione
经验公式（希尔记法）:
C20H10O2
CAS号:
5695-13-6
分子量:
282.29
MDL编号:
MFCD22666459
UNSPSC代码:
12352103
PubChem化学物质编号:
329767500
NACRES:
NA.23

检测方案

99%

形式

powder

mp

350-354 °C

SMILES字符串

O=C1c2ccccc2-c3cc4C(=O)c5ccccc5-c4cc13

InChI

1S/C20H10O2/c21-19-13-7-3-1-5-11(13)15-9-18-16(10-17(15)19)12-6-2-4-8-14(12)20(18)22/h1-10H

InChI key

AAUHGKXJBZEARK-UHFFFAOYSA-N

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应用

Core unit affording n-type organic semiconductors for n-type FET
Indeno[1,2-b]fluorene-6,12-dione is a semiconducting polymer that can be used as an acceptor molecule in the fabrication of organic electronic devices such as organic light emitting diodes (OLEDs) and organic field effect transistors (OFETs).

象形图

Exclamation mark
GHS07

警示用语：

Warning

危险声明

H302

危险分类

Acute Tox. 4 Oral

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

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Preparation, physical properties and n-type FET characteristics of substituted diindenopyrazinediones and bis (dicyanomethylene) derivatives
Nishida J, et al.
Journal of Materials Chemistry, 22(10), 4483-4490 (2012)
New 3pi-2Spiro Ladder-Type Phenylene Materials: Synthesis, Physicochemical Properties and Applications in OLEDs
Cocherel N, et al.
Chemistry?A European Journal , 14(36), 11328-11342 (2008)
High performance n-type field-effect transistors based on indenofluorenedione and diindenopyrazinedione derivatives
Nakagawa T, et al.
Chemistry of Materials, 20(8), 2615-2617 (2008)
Preparation, physical properties and n-type FET characteristics of substituted diindenopyrazinediones and bis(dicyanomethylene) derivatives
Journal of Materials Chemistry, 22, 4483-4490 (2012)
High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
Chemistry of Materials, 20, 2615-2617 (2008)
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