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Merck
CN
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安全信息

767492

Sigma-Aldrich

硅

sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC 号:
231-130-8
MDL编号:
MFCD00085311
UNSPSC代码:
12352103
PubChem化学物质编号:
329767318
NACRES:
NA.23

方案

99.999% trace metals basis

表单

solid

反应适用性

core: silicon

直径× 厚度

2.00 in. × 0.25 in.

沸点

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

SMILES字符串

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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应用

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition

储存分类代码

13 - Non Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

法规信息

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分析证书(COA)

Lot/Batch Number
MKCL4008
MKBN4022V

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Kostantinidis, S.; et al.
The European Physical Journal - Applied Physics, 56, 24002/1-24002/1 (2011)
Helmersson; U.; et al.
Thin Solid Films, 513, 1-1 (2006)
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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