767492
硅
sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
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关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
231-130-8
MDL number:
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI
1S/Si
SMILES string
[Si]
assay
99.999% trace metals basis
form
solid
reaction suitability
core: silicon
diam. × thickness
2.00 in. × 0.25 in.
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
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Application
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition
flash_point_f
Not applicable
flash_point_c
Not applicable
存储类别
11 - Combustible Solids
wgk
nwg
法规信息
新产品
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Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
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