767492
硅
sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
登录 查看组织和合同定价。
选择尺寸
关于此项目
线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352103
EC Number:
231-130-8
MDL number:
产品名称
硅, sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.999% trace metals basis
InChI key
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
InChI
1S/Si
SMILES string
[Si]
assay
99.999% trace metals basis
form
solid
reaction suitability
core: silicon
diam. × thickness
2.00 in. × 0.25 in.
bp
2355 °C (lit.)
mp
1410 °C (lit.)
density
2.33 g/mL at 25 °C (lit.)
正在寻找类似产品? 访问 产品对比指南
Application
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The extreme miniaturization of components in the semiconductor and electronics industry requires high purity sputtering targets for thin film deposition
存储类别
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
法规信息
新产品
此项目有
Kostantinidis, S.; et al.
The European Physical Journal - Applied Physics, 56, 24002/1-24002/1 (2011)
Helmersson; U.; et al.
Thin Solid Films, 513, 1-1 (2006)
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
商品
Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持