所有图片(1)
别名:
Gallium monophosphide
线性分子式:
GaP
CAS号:
分子量:
100.70
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23
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质量水平
形式
(single crystal substrate)
电阻率
~0.3 Ω-cm
直径× 厚度
2 in. × 0.5 mm
mp
1480 °C
密度
4.13 g/mL at 25 °C
半导体性质
<111>
SMILES字符串
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
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物理属性
未掺杂的（N 型半导体），载流子浓度 = 2-6×1016cm-3，蚀坑密度 <3×105cm-2，生长技术为液封直拉法
热膨胀：5.3×10-6/°C
外形
立方晶系 (a = 5.4505Å)
警示用语：
Warning
危险声明
危险分类
Eye Irrit. 2 - STOT SE 3
靶器官
Respiratory system
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
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The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these
A Fakhr et al.
Nanotechnology, 21(16), 165601-165601 (2010-03-30)
InGaP nanowires (NWs) were grown by the Au-assisted method in a gas source molecular beam epitaxy system. The dependence of InGaP composition, morphology and stacking fault density was studied with respect to group III and V impingement rate and size
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
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Biomaterials, 29(35), 4598-4604 (2008-09-20)
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Optics express, 19(7), 6093-6099 (2011-04-01)
We describe dynamical four wave mixing (FWM) functionalities of an GaInP photonic crystal waveguide. A W1 waveguide was used to wavelength convert 100 ps pulses and for sampling a 10.56 Gbit/s data stream so as to time demultiplex it into
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