推荐产品
质量水平
表单
(single crystal substrate)
电阻率
~0.3 Ω-cm
直径× 厚度
2 in. × 0.5 mm
mp
1480 °C
密度
4.13 g/mL at 25 °C
半导体性质
<111>
SMILES字符串
[P]#[Ga]
InChI
1S/Ga.P
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
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物理属性
未掺杂的（N 型半导体），载流子浓度 = 2-6×1016cm-3，蚀坑密度 <3×105cm-2，生长技术为液封直拉法
热膨胀：5.3×10-6/°C
外形
立方晶系 (a = 5.4505Å)
警示用语：
Warning
危险声明
危险分类
Eye Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
11 - Combustible Solids
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Marcos Paulo Pinheiro Ferreira et al.
Photomedicine and laser surgery, 27(6), 901-906 (2009-08-25)
To evaluate the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions (muscle injury model) using low-energy gallium-aluminum-arsenide (GaAlAs) and aluminium-gallium-indium-phosphide (InGaAlP) lasers with different wavelengths and powers. The beneficial effects of phototherapy using low-energy
I Cestier et al.
Optics express, 19(7), 6093-6099 (2011-04-01)
We describe dynamical four wave mixing (FWM) functionalities of an GaInP photonic crystal waveguide. A W1 waveguide was used to wavelength convert 100 ps pulses and for sampling a 10.56 Gbit/s data stream so as to time demultiplex it into
Jian Wu et al.
Nano letters, 9(9), 3252-3257 (2009-08-15)
We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs with diameter d =
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Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
实验方案
Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.
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