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Merck
CN

632317

氧化铟(III)

nanopowder, <100 nm particle size (TEM), 99.9% trace metals basis

别名:

三氧化二铟, 氧化铟

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关于此项目

经验公式(希尔记法):
In2O3
化学文摘社编号:
分子量:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352302
EC Number:
215-193-9
MDL number:
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产品名称

氧化铟(III), nanopowder, <100 nm particle size (TEM), 99.9% trace metals basis

InChI key

SHTGRZNPWBITMM-UHFFFAOYSA-N

InChI

1S/2In.3O

SMILES string

O=[In]O[In]=O

vapor pressure

<0.01 mmHg ( 25 °C)

assay

99.9% trace metals basis

form

nanopowder

reaction suitability

reagent type: catalyst
core: indium

particle size

<100 nm (TEM)

density

7.18 g/mL at 25 °C (lit.)

Quality Level

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Application

  • 胺基修饰表面受阻路易斯对用于CO2光催化:用含有胺基修饰表面受阻路易斯对的氧化铟氢氧化物,增强CO2还原的光催化性能(Q Guan et al., 2024)。
  • 光激发增强气体传感能力:研究通过400 nm紫外光激发法提高金属氧化物(包括氧化铟)半导体化学电阻的气体传感性能(S Paul et al., 2024)。
  • 铟(III)络合物的工业应用和纳米颗粒合成:综述三价铟络合物作为催化剂和前体在各种工业中的应用,以及氧化铟等纳米颗粒的合成(TO Ajiboye et al., 2024)。
  • Ag/In2O3反蛋白石合成:详述银/氧化铟反蛋白石结构的合成和前景,它们因为光学特性具有半导体应用潜力(AV Lyutova et al., 2024)。
  • 光催化生成羟基自由基和锰物种:研究用氧化铟增强高锰酸盐的光催化性能,以在可见光下高效去除微污染物(J Li et al., 2024)

General description

氧化铟 (III) 是一种用途广泛的化合物,在电子、光学和材料科学中具有重要应用。由于其导电性和光学透明度,它广泛用于合成透明导电氧化物 (TCO),特别是用于平板显示器和太阳能电池。在半导体技术中,它用于制造氧化铟锡 (ITO),可增强电子设备的性能,并且对各种气体敏感,因此适用于气体传感应用,尤其是在检测危险气体。

存储类别

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

dust mask type N95 (US), Eyeshields, Gloves


历史批次信息供参考:

分析证书(COA)

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Dongjin Lee et al.
Sensors (Basel, Switzerland), 11(10), 9300-9312 (2011-12-14)
We report a conductometric nanoparticle biosensor array to address the significant variation of electrical property in nanomaterial biosensors due to the random network nature of nanoparticle thin-film. Indium oxide and silica nanoparticles (SNP) are assembled selectively on the multi-site channel
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
K H L Zhang et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334211-334211 (2011-08-05)
Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of

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