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关于此项目
线性分子式:
GaP
化学文摘社编号:
分子量:
100.70
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
235-057-2
MDL number:
产品名称
磷化镓, 99.99% trace metals basis
InChI key
HZXMRANICFIONG-UHFFFAOYSA-N
InChI
1S/Ga.P
SMILES string
[P]#[Ga]
assay
99.99% trace metals basis
form
chunks
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signalword
Warning
hcodes
Hazard Classifications
Eye Irrit. 2 - STOT SE 3
target_organs
Respiratory system
存储类别
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Mohammad Montazeri et al.
Nano letters, 10(3), 880-886 (2010-02-06)
Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by
I Cestier et al.
Optics express, 18(6), 5746-5753 (2010-04-15)
We report a large nonlinear response in a 1.3mm long GaInP photonic crystal waveguide. The wide band gap of GaInP (1.9 eV) ensures that no two photon absorption takes place for photons at 1.55mm improving the nonlinear performance. The nonlinearity
Dion McIntosh et al.
Optics express, 19(20), 19607-19612 (2011-10-15)
Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than
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