质量水平
检测方案
99.9% trace metals basis
形式
powder
mp
800 °C (lit.)
SMILES字符串
N#[Ga]
InChI
1S/Ga.N
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
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应用
氮化镓（GaN）是一种宽带隙半导体材料，可用于各种电子器件的开发，如发光二极管（LED）和场效应晶体管（FET）。它还可用作基于自旋电子学应用的过渡金属掺杂剂。
警示用语：
Warning
危险声明
危险分类
Skin Sens. 1
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Faceshields, Gloves, type N95 (US)
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
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