481769
氮化镓
99.9% trace metals basis
别名:
氮化镓, 氮化镓（GaN）
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关于此项目
线性分子式:
GaN
化学文摘社编号:
分子量:
83.73
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
EC Number:
247-129-0
MDL number:
产品名称
氮化镓, 99.9% trace metals basis
InChI key
JMASRVWKEDWRBT-UHFFFAOYSA-N
InChI
1S/Ga.N
SMILES string
N#[Ga]
assay
99.9% trace metals basis
form
powder
mp
800 °C (lit.)
Quality Level
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Application
氮化镓（GaN）是一种宽带隙半导体材料，可用于各种电子器件的开发，如发光二极管（LED）和场效应晶体管（FET）。它还可用作基于自旋电子学应用的过渡金属掺杂剂。
signalword
Warning
hcodes
Hazard Classifications
Skin Sens. 1
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Faceshields, Gloves, type N95 (US)
High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
Kim H, et al.
Nano Letters, 4(6), 1059-1062 (2004)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Gallium nitride processing for electronics, sensors and spintronics, 2(2), 101-104 (2006)
Gallium nitride as an electromechanical material
Rais-Zadeh M, et al.
Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
Gallium nitride nanowire nanodevices
Huang Y, et al.
Nano Letters, 2(2), 101-104 (2002)
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