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等级
semiconductor grade PURANAL™ (Honeywell 17823)
蒸汽密度
1.3 (vs air)
蒸汽压
3.23 psi ( 21.1 °C)
7.93 psi ( 37.7 °C)
方案
37-38%
CofA
specification on request
浓度
30-50%
颜色
light yellow
沸点
>100 °C (lit.)
溶解性
H2O: soluble
密度
1.070 g/cm3 at 20 °C (lit.)
SMILES字符串
Cl
InChI
1S/ClH/h1H
InChI key
VEXZGXHMUGYJMC-UHFFFAOYSA-N
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一般描述
Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. It′s efficiency as a microabrasive was studied.
应用
Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).
法律信息
PURANAL is a trademark of Honeywell Specialty Chemicals Seelze GmbH
警示用语：
Danger
危险声明
危险分类
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3
靶器官
Respiratory system
储存分类代码
8B - Non-combustible corrosive hazardous materials
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
新产品
Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)
Charlotte Strandgren et al.
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