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蒸汽压
7.85 psi ( 20 °C)
检测方案
95%
形式
liquid
折射率
n20/D 1.352 (lit.)
bp
34-35 °C (lit.)
密度
1.305 g/mL at 25 °C (lit.)
SMILES字符串
FC(F)(F)CS
InChI
1S/C2H3F3S/c3-2(4,5)1-6/h6H,1H2
InChI key
RYRLLAOLJVDVNN-UHFFFAOYSA-N
一般描述
2,2,2-三氟乙硫醇是一种氟化硫醇。研究了 2，2，2-三氟乙硫醇及其氘代分子 CF3CH2SD 的微波光谱。用傅里叶变换离子回旋共振波谱研究了 2，2，2-三氟乙硫醇 (TFET) 的气相酸碱性。采用程序升温段、俄歇电子能谱和红外光谱研究了 2，2，2-三氟乙硫醇在 Mo (110) 表面的反应。
2，2，2-三氟乙硫醇为碱性，与碘分子形成电荷转移络合物。
应用
- Advancements in Peptide Synthesis: A novel synthesis of β-thiol phenylalanine showcases the use of 2,2,2-Trifluoroethanethiol in facilitating one-pot ligation-desulfurization chemistry. This technique is pivotal for developing new peptide-based pharmaceuticals, enhancing both the efficiency and versatility of peptide synthesis (Malins et al., 2015).
警示用语：
Danger
危险分类
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Eye Irrit. 2 - Flam. Liq. 1 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
WGK
WGK 3
闪点(°F)
closed cup
闪点(°C)
closed cup
个人防护装备
Eyeshields, Faceshields, Gloves
法规信息
危险化学品
Harald Møllendal
The journal of physical chemistry. A, 112(32), 7481-7487 (2008-07-22)
The microwave spectrum of 2,2,2-trifluoroethanethiol, CF3CH2SH, and of one deuterated species, CF3CH2SD, has been investigated in the 7-80 GHz spectral interval. The microwave spectra of the ground and three vibrationally excited states belonging to three different normal modes of one
Effect of Fluorination on Thiol Reactivity: Reaction of 2, 2, 2-Trifluoroethanethiol on Mo (110).
Napier ME and Friend CM.
The Journal of Physical Chemistry, 99(21), 8750-8757 (1995)
Intrinsic acidity and basicity of 2, 2, 2-trifluoroethanethiol. The first experimental and theoretical study.
Molina MT, et al.
The Journal of Organic Chemistry, 61(16), 5485-5491 (1996)
Intrinsic (gas-phase) basicities and stability of charge-transfer complexes in solution.
Bouab W, et al.
Journal of Physical Organic Chemistry, 10(5), 343-346 (1997)
Dong Min Sim et al.
ACS nano, 9(12), 12115-12123 (2015-10-28)
MoS2 is considered a promising two-dimensional active channel material for future nanoelectronics. However, the development of a facile, reliable, and controllable doping methodology is still critical for extending the applicability of MoS2. Here, we report surface charge transfer doping via
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