蒸汽压
<0.01 mmHg ( 25 °C)
质量水平
检测方案
≥99.995% trace metals basis
形式
foil
电阻率
8.37 μΩ-cm
厚度
0.1 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES字符串
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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一般描述
Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.
应用
Wetting behaviour of eutectic gallium-indium alloys on bare indium foil was investigated.
数量
1.8g = 50×50mm;7.2g = 100×100mm
警示用语:
Danger
危险声明
危险分类
STOT RE 1 Inhalation
靶器官
Lungs
储存分类代码
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
Langmuir : the ACS journal of surfaces and colloids, 30(2), 533-539 (2013-12-24)
Liquid-embedded elastomer electronics have recently attracted much attention as key elements of highly deformable and "soft" electromechanical systems. Many of these fluid-elastomer composites utilize liquid metal alloys because of their high conductivities and inherent compliance. Understanding how these alloys interface
Recalibration of Indium foil for personnel screening in criticality accidents
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Radiation Measurements, 45, 1024-1033 (2010)
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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