产品名称
铟, foil, thickness 0.25 mm, 99.99% trace metals basis
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
InChI
1S/In
SMILES string
[In]
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.99% trace metals basis
form
foil
resistivity
8.37 μΩ-cm
thickness
0.25 mm
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
Quality Level
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Preparation Note
4.6g = 50×50mm;18.4g = 100×100mm;41.4g = 150×150mm
Application
- High sodium ionic conductivity in PEO/PVP solid polymer electrolytes with InAs nanowire fillers.: Explores the enhancement of ionic conductivity in polymer electrolytes through the incorporation of indium arsenide nanowires, offering significant implications for battery efficiency ( Devi et al., 2021).
- A Corrosion-Resistant and Dendrite-Free Zinc Metal Anode in Aqueous Systems.: Introduces a corrosion-resistant indium-containing anode design for aqueous batteries, which prevents dendrite formation and enhances overall battery safety ( Han et al., 2020).
General description
Indium foil is widely used in nuclear facilities to capture thermal neutrons, because it shows a high cross section of neutron capture reaction. Hence, it may be used in dosemeters to measure exposure. Indium foils were studied for simultaneous monitoring neutron and photon intensities in a reactor core.
signalword
Danger
hcodes
Hazard Classifications
STOT RE 1 Inhalation
target_organs
Lungs
存储类别
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
wgk
WGK 1
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Activation detection using indium foils for simultaneous monitoring neutron and photon intensities in a reactor core.
Chao JH and Chiang AC
Radiation Measurements, 45, 1024-1033 (2010)
Recalibration of Indium foil for personnel screening in criticality accidents
Takada C, et al.
Radiation Protection Dosimetry, 144(1-4), 575-579 (2010)
G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
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