推荐产品
方案
99.999% trace metals basis
表单
pieces
密度
5.31 g/mL at 25 °C (lit.)
SMILES字符串
[Ga]#[As]
InChI
1S/As.Ga
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
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警示用语：
Danger
危险声明
危险分类
Carc. 1B - Repr. 1B - STOT RE 1
靶器官
Respiratory system,hematopoietic system
储存分类代码
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
法规信息
新产品
Brandon J Beberwyck et al.
Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30)
III-V nanocrystals displaying high crystallinity and low size dispersity are difficult to access by direct synthesis from molecular precursors. Here, we demonstrate that cation exchange of cadmium pnictide nanocrystals with group 13 ions yields monodisperse, crystalline III-V nanocrystals, including GaAs
Yuttapoom Puttisong et al.
Advanced materials (Deerfield Beach, Fla.), 25(5), 738-742 (2012-10-31)
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for
Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
Andrew Lee et al.
Optics express, 20(20), 22181-22187 (2012-10-06)
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold
V V Solovyev et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28)
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies
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