327395
锗
powder, −100 mesh, ≥99.999% trace metals basis
别名:
Elemental germanium
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关于此项目
经验公式（希尔记法）:
Ge
化学文摘社编号:
分子量:
72.64
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141716
EC Number:
231-164-3
MDL number:
产品名称
锗, powder, −100 mesh, ≥99.999% trace metals basis
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
InChI
1S/Ge
SMILES string
[Ge]
assay
≥99.999% trace metals basis
form
powder
resistivity
53 Ω-cm, 20°C
particle size
−100 mesh
bp
2830 °C (lit.)
mp
937 °C (lit.)
density
5.35 g/mL at 25 °C (lit.)
Quality Level
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Application
该产品可以用作形成具有优异的可调光致发光和光催化活性的高度多孔ZrO2:Tb3+纳米磷光体的前体之一。
signalword
Danger
hcodes
Hazard Classifications
Aquatic Acute 1 - Aquatic Chronic 2 - Flam. Sol. 1 - Repr. 2 - STOT RE 2 Oral
target_organs
Kidney
存储类别
4.1B - Flammable solid hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
Thermoluminescence glow curve for UV induced ZrO2:Ti phosphor with variable concentration of dopant and various heating rate
Tiwari N, et al.
Journal of Radiation Research and Applied Sciences, 7(4), 542-549 (2014)
Phase transformation of ZrO 2: Tb 3+ nanophosphor: Color tunable photoluminescence and photocatalytic activities.
Vidya YS, et al.
J. Alloy Compounds, 622, 86-96 (2015)
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
商品
Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.
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