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Merck
CN

326615

Sigma-Aldrich

pieces, 99.99% trace metals basis

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About This Item

经验公式(希尔记法):
In
CAS号:
分子量:
114.82
EC 号:
MDL编号:
UNSPSC代码:
12141719
PubChem化学物质编号:
NACRES:
NA.23

蒸汽压

<0.01 mmHg ( 25 °C)

质量水平

方案

99.99% trace metals basis

表单

pieces

电阻率

8.37 μΩ-cm

近似片尺寸

1/4-2 in.

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES字符串

[In]

InChI

1S/In

InChI key

APFVFJFRJDLVQX-UHFFFAOYSA-N

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象形图

Health hazard

警示用语:

Danger

危险声明

危险分类

STOT RE 1 Inhalation

靶器官

Lungs

储存分类代码

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

dust mask type N95 (US), Eyeshields, Gloves

法规信息

新产品

从最新的版本中选择一种:

分析证书(COA)

Lot/Batch Number

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G W Shu et al.
Physical chemistry chemical physics : PCCP, 15(10), 3618-3622 (2013-02-06)
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of
Dawei Deng et al.
Physical chemistry chemical physics : PCCP, 15(14), 5078-5083 (2013-03-02)
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile approach to produce water-soluble (cadmium-free) quaternary Zn-Ag-In-S (ZAIS) QDs. Their efficient
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
J S Fandiño et al.
Optics express, 21(3), 3726-3736 (2013-03-14)
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our knowledge, the first reported in an active platform and the

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