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线性分子式:
In(NO3)3 · xH2O
化学文摘社编号:
分子量:
300.83 (anhydrous basis)
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352302
EC Number:
237-393-5
MDL number:
Assay:
99.99% trace metals basis
Form:
powder and chunks
产品名称
硝酸铟(III) 水合物, 99.99% trace metals basis
InChI key
YZZFBYAKINKKFM-UHFFFAOYSA-N
InChI
1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;
SMILES string
[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O
assay
99.99% trace metals basis
form
powder and chunks
reaction suitability
core: indium
reagent type: catalyst
impurities
≤150.0 ppm Trace Metal Analysis
Quality Level
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Application
硝酸铟(III)水合物用于制备基于铟的基底,用于制造半导体器件(例如薄膜晶体管)。
General description
硝酸铟(III)水合物是铟的前体溶液,可在 500°C 退火,旋涂形成氧化铟薄膜。
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2
存储类别
5.1B - Oxidizing hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
法规信息
危险化学品
此项目有
Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the
商品
Colloidal quantum dots (CQDs) are semiconducting crystals of only a few nanometers (ca. 2–12 nm) coated with ligand/surfactant molecules to help prevent agglomeration.
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