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质量水平
方案
99.99% trace metals basis
表单
powder and chunks
反应适用性
reagent type: catalyst
core: indium
杂质
≤150.0 ppm Trace Metal Analysis
SMILES字符串
[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O
InChI
1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;
InChI key
YZZFBYAKINKKFM-UHFFFAOYSA-N
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一般描述
硝酸铟（III）水合物是铟的前体溶液，可在 500°C 退火，旋涂形成氧化铟薄膜。
应用
硝酸铟（III）水合物用于制备基于铟的基底，用于制造半导体器件（例如薄膜晶体管）。
警示用语：
Danger
危险分类
Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2
储存分类代码
5.1B - Oxidizing hazardous materials
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type P3 (EN 143) respirator cartridges
法规信息
危险化学品
从最新的版本中选择一种：
分析证书(COA)
Lot/Batch Number
Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the
商品
Colloidal quantum dots (CQDs) are semiconducting crystals of only a few nanometers (ca. 2–12 nm) coated with ligand/surfactant molecules to help prevent agglomeration.
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