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蒸汽压
<0.01 mmHg ( 25 °C)
质量水平
检测方案
99.99% trace metals basis
形式
foil
电阻率
8.37 μΩ-cm
厚度
0.127 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES字符串
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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应用
铟箔是用于低温的具有高电导率的热界面材料。它也可以用作铟蒸气源，用于在硅衬底上制备氮化铟纳米线。它也可用于飞行时间二次离子质谱（ToF-SIMS） 分析粉末样品。
数量
2.3 g = 50 × 50 mm；9.2 g = 100 × 100 mm
警示用语：
Danger
危险声明
危险分类
STOT RE 1 Inhalation
靶器官
Lungs
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
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Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Yongseok Kwon et al.
Organic letters, 15(4), 920-923 (2013-02-05)
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
Vahid A Akhavan et al.
ChemSusChem, 6(3), 481-486 (2013-02-13)
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
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