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蒸汽压
<0.01 mmHg ( 25 °C)
质量水平
方案
99.99% trace metals basis
表单
foil
电阻率
8.37 μΩ-cm
厚度
0.127 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES字符串
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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应用
铟箔是用于低温的具有高电导率的热界面材料。它也可以用作铟蒸气源,用于在硅衬底上制备氮化铟纳米线。它也可用于飞行时间二次离子质谱(ToF-SIMS) 分析粉末样品。
数量
2.3 g = 50 × 50 mm;9.2 g = 100 × 100 mm
警示用语:
Danger
危险声明
危险分类
STOT RE 1 Inhalation
靶器官
Lungs
储存分类代码
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 1
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
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A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
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The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
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