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质量水平
方案
99.99% trace metals basis
表单
(metallic liquid or solid (ambient temp dependent))
电阻率
25.795 μΩ-cm, 30°C
沸点
2403 °C (lit.)
mp
29.8 °C (lit.)
密度
5.904 g/mL at 25 °C (lit.)
储存温度
2-8°C
SMILES字符串
[Ga]
InChI
1S/Ga
InChI key
GYHNNYVSQQEPJS-UHFFFAOYSA-N
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一般描述
镓(Gallium)是一种稀土元素，广泛用于智能电子装置和集成电路，具有低能耗和高运算速度的优点。因其高沸点和低熔点，在较宽的温度范围内呈现液态。因其高电荷，可形成硫酸化、氯化和磷酸化复合物。镓化合物可用于先进的半导体和LED芯片。
应用
镓可作为前体合成：
- 氮化镓等镓基化合物，用于光电领域。
- 硫/镓杂化正极材料，用于锂硫电池。镓金属表面的电催化性可促进多硫化锂的氧化还原反应。
- 基于镓的液体合金，用于制造柔性电子装置。
特点和优势
- 优异的热和电传导性
- 在较宽的温度范围内呈现液态
- 高温下具有低蒸汽压
警示用语：
Warning
危险声明
危险分类
Acute Tox. 4 Oral - Aquatic Chronic 3 - Met. Corr. 1
储存分类代码
8A - Combustible corrosive hazardous materials
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges
法规信息
危险化学品
Sayan Sarkar et al.
Scientific reports, 9(1), 8180-8180 (2019-06-05)
Recent advances in high performance thermoelectric materials have garnered unprecedented attention owing to their capability of direct transformation of heat energy to useful electricity. Copper Telluride (Cu2Te), a member of the chalcogenide family has emerged as a state-of-the-art thermoelectric material
Elizabeth M Carnicom et al.
Dalton transactions (Cambridge, England : 2003), 46(41), 14158-14163 (2017-10-07)
Previously unreported σ-phases in the ternary niobium-based systems Nb-X-Ga for X = Ru, Rh, Pd, Ir, Pt, Au, and Nb-X-Al for X = Ir, and Pt are presented, prepared by arc-melting followed by annealing at 1000 °C for 1 week.
Chen, X.Z. et al.
Chemistry of Materials, 11, 75-75 (1999)
C Tessarek et al.
Optics express, 21(3), 2733-2740 (2013-03-14)
Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically
Technetium and gallium derived radiopharmaceuticals: comparing and contrasting the chemistry of two important radiometals for the molecular imaging era.
Mark D Bartholomä et al.
Chemical reviews, 110(5), 2903-2920 (2010-04-27)
商品
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