263230
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chips, 99.999% trace metals basis
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关于此项目
经验公式（希尔记法）:
Ge
化学文摘社编号:
分子量:
72.64
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12141716
EC Number:
231-164-3
MDL number:
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
InChI
1S/Ge
SMILES string
[Ge]
assay
99.999% trace metals basis
form
chips
resistivity
53 Ω-cm, 20°C
bp
2830 °C (lit.)
mp
937 °C (lit.)
density
5.35 g/mL at 25 °C (lit.)
Quality Level
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存储类别
13 - Non Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
法规信息
新产品
此项目有
Maurizio Mattesini et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035601-035601 (2012-12-12)
The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr(2)GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA + U). The effective U value has been computed within the
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Jian-Qiang Shen et al.
Dalton transactions (Cambridge, England : 2003), 42(16), 5812-5817 (2013-03-05)
An unprecedented organic-inorganic hybrid germanoniobate compound Na4[Cu(en)2(H2O)2]5[Na6Ge8Nb32O108H8(OH)4]·41H2O (1) was synthesized under the hydrothermal condition. In compound 1, the {Nb16} cage containing four {GeO4} tetrahedra in its internal cavity results in a heteropolyniobate anion [H4Ge4Nb16O54(OH)2](10-) ({Ge4Nb16}), which is connected by a
Fabian von Rohr et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 075804-075804 (2013-01-25)
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi(4)Te(7), GeSb(4)Te(7) and Ge(Bi(1-x)Sb(x))(4)Te(7) solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved
Philippe Jund et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035403-035403 (2012-12-15)
We report an ab initio study of the semiconducting Mg(2)X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the
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Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.
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