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蒸汽压
11.47 psi ( 20 °C)
质量水平
方案
99%
表单
liquid
折射率
n20/D 1.393 (lit.)
沸点
27 °C (lit.)
mp
−32 °C (lit.)
密度
0.691 g/mL at 25 °C (lit.)
储存温度
2-8°C
SMILES字符串
CC#CC
InChI
1S/C4H6/c1-3-4-2/h1-2H3
InChI key
XNMQEEKYCVKGBD-UHFFFAOYSA-N
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一般描述
目前已有人使用离子阱质谱法研究了芳香族N-甲基-吡啶-4-基自由基阳离子与2-丁炔的离子-分子反应。
应用
2-丁炔已用于制备无THF的金属环丁烯复合物。
警示用语：
Danger
危险分类
Eye Irrit. 2 - Flam. Liq. 1 - Skin Irrit. 2 - STOT SE 3
靶器官
Respiratory system
储存分类代码
3 - Flammable liquids
WGK
WGK 3
闪点(°F)
-13.0 °F - closed cup
闪点(°C)
-25 °C - closed cup
个人防护装备
Eyeshields, Faceshields, Gloves
法规信息
危险化学品
C J Kees-Jan Weststrate et al.
Nature communications, 11(1), 750-750 (2020-02-08)
Facile C-C bond formation is essential to the formation of long hydrocarbon chains in Fischer-Tropsch synthesis. Various chain growth mechanisms have been proposed previously, but spectroscopic identification of surface intermediates involved in C-C bond formation is scarce. We here show
Living polymerization of 2-butyne using a well-characterized tantalum catalyst.
Wallace KC, et al.
Organometallics, 8(3), 644-654 (1989)
Hongzhen Wang et al.
The journal of physical chemistry. A, 119(46), 11313-11319 (2015-10-23)
The state-selective photodissociation of diacetylene (C4H2) was studied in the wavelength range of 127.5-164.4 nm by high-resolution Rydberg H atom time-of-flight spectroscopy measurements. In the wavelength region, two Rydberg series nR and nR' were state-selectively excited using tunable vacuum-ultraviolet laser
A K Y Lam et al.
Physical chemistry chemical physics : PCCP, 14(7), 2417-2426 (2012-01-18)
Aromatic radicals form in a variety of reacting gas-phase systems, where their molecular weight growth reactions with unsaturated hydrocarbons are of considerable importance. We have investigated the ion-molecule reaction of the aromatic distonic N-methyl-pyridinium-4-yl (NMP) radical cation with 2-butyne (CH(3)C≡CCH(3))
Oleg G Salnikov et al.
Chemical science, 8(3), 2426-2430 (2017-04-30)
Mechanistic insight into the semihydrogenation of 1-butyne and 2-butyne on Cu nanoparticles supported on partially dehydroxylated silica (Cu/SiO
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