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About This Item
线性分子式:
La(OCC(CH3)3CHCOC(CH3)3)3
CAS号:
分子量:
688.71
MDL编号:
UNSPSC代码:
12142201
PubChem化学物质编号:
NACRES:
NA.21
检测方案
99%
形式
powder or crystals
bp
370 °C (lit.)
mp
128-131 °C (lit.)
SMILES字符串
CC(C)(C)C(=O)\C=C(/O[Yb](O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)O\C(=C/C(=O)C(C)(C)C)C(C)(C)C)C(C)(C)C
InChI
1S/3C11H20O2.La/c3*1-10(2,3)8(12)7-9(13)11(4,5)6;/h3*7,12H,1-6H3;/q;;;+3/p-3/b3*8-7-;
InChI key
IXHLTRHDDMSNAP-LWTKGLMZSA-K
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法律信息
Resolve-Al is a trademark of Sigma-Aldrich Co. LLC
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
法规信息
新产品
MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation.
Bedoya C, et al.
Chem. Vap. Deposition, 12(1), 46-53 (2006)
Structural and electrical properties of a La2O3 thin film as a gate dielectric.
Jun JH, et al.
The Journal of the Korean Physical Society, 11(6) (2002)
Study on the precursors for La2O3 thin films deposited on silicon substrate.
Jun J, et al.
Journal of Materials Science Letters, 21(23), 1847-1849 (2002)
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