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Merck
CN

217913

Sigma-Aldrich

四氯化锡

99.995% trace metals basis

别名:

发烟氯化高锡

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About This Item

线性分子式:
SnCl4
CAS号:
分子量:
260.52
EC 号:
MDL编号:
UNSPSC代码:
12352106
PubChem化学物质编号:
NACRES:
NA.22

蒸汽密度

9 (vs air)

质量水平

蒸汽压

10 mmHg ( 10 °C)
18.6 mmHg ( 20 °C)
20 mmHg ( 22 °C)

方案

99.995% trace metals basis

表单

liquid

反应适用性

core: tin
reagent type: Lewis acid
reagent type: catalyst

沸点

114 °C (lit.)

mp

−33 °C (lit.)

密度

2.226 g/mL at 25 °C (lit.)

SMILES字符串

Cl[Sn](Cl)(Cl)Cl

InChI

1S/4ClH.Sn/h4*1H;/q;;;;+4/p-4

InChI key

HPGGPRDJHPYFRM-UHFFFAOYSA-J

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应用

将聚苯胺(一种得到深入研究的聚合物)用 SnCl4 掺杂后,可使其硝基甲烷溶液稳定化,并可进行溶液处理。
路易斯酸催化剂

象形图

CorrosionExclamation mark

警示用语:

Danger

危险声明

危险分类

Aquatic Chronic 3 - Eye Dam. 1 - Skin Corr. 1B - STOT SE 3

靶器官

Respiratory system

储存分类代码

8A - Combustible corrosive hazardous materials

WGK

WGK 1

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

法规信息

危险化学品

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

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Bastian Waduge Naveen Harindu Hemasiri et al.
Scientific reports, 7(1), 17868-17868 (2017-12-21)
Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was
Kulszewicz-Bajer, I. et al.
Chemistry of Materials, 11, 552-552 (1999)
Chemistry Letters (Jpn), 36, 826-826 (2007)
Jinyan Dai et al.
ChemSusChem, 12(23), 5092-5098 (2019-10-20)
One of the key challenges for the development of lithium-ion batteries is the preparation of high-performance anode materials. In this paper, a micro/nanostructured Si@SnS2 -rGO composite is reported in which Si nanoparticles with a particle size of 30 nm are electrostatically
Evangelina Repetto et al.
Bioorganic & medicinal chemistry, 17(7), 2703-2711 (2009-03-14)
Thiodisaccharides having beta-D-Galf or alpha-L-Araf units as non-reducing end have been synthesized by the SnCl(4)- or MoO(2)Cl(2)-promoted thioglycosylation of per-O-benzoyl-D-galactofuranose (1), its 1-O-acetyl analogue 4, or per-O-acetyl-alpha-L-arabinofuranose (16) with 6-thioglucose or 6-thiogalactose derivatives. After convenient removal of the protecting groups

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