所有图片(3)
About This Item
经验公式（希尔记法）:
Te
CAS号:
分子量:
127.60
EC 号:
MDL编号:
UNSPSC代码:
12141913
eCl@ss:
38040201
PubChem化学物质编号:
NACRES:
NA.23
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质量水平
方案
99.999% trace metals basis
表单
pieces
电阻率
5.8-33 μΩ-cm, 20°C
沸点
990 °C (lit.)
mp
450 °C (lit.)
密度
6.24 g/mL at 25 °C (lit.)
SMILES字符串
[Te]
InChI
1S/Te
InChI key
PORWMNRCUJJQNO-UHFFFAOYSA-N
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一般描述
碲是p型窄带隙半导体亚金属，具有优良的光导性和热导性。广泛用作太阳能光伏板、热电装置与合金的基材。
应用
碲是包括拓扑绝缘体在内的多种先进材料的重要组成部分，如热电材料和碲化物纳米线。这种材料的形式非常适用于真空沉积技术，如MBE分子束外延。
警示用语：
Danger
危险分类
Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B
储存分类代码
6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects
WGK
WGK 2
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
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ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based
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Optics express, 21(4), 4703-4708 (2013-03-14)
The octave-spanning spectrum was generated in a tellurite glass based microstructured fiber pumped by a 528 MHz repetition rate Yb:fiber ring laser without amplification. The laser achieved 40% output optical-to-optical efficiency with the output power of 410 mW. By adjusting
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