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203602

Sigma-Aldrich

碘化铅(II)

99.999% trace metals basis

别名:

Diiodolead, Plumbous iodide

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About This Item

线性分子式:
PbI2
CAS号:
10101-63-0
分子量:
461.01
EC 号:
233-256-9
MDL编号:
MFCD00011163
UNSPSC代码:
12352302
PubChem化学物质编号:
24852184
NACRES:
NA.23
方案:
99.999% trace metals basis
表单:
solid

质量水平

100

方案

99.999% trace metals basis

表单

solid

反应适用性

reagent type: catalyst
core: lead

杂质

≤15.0 ppm Trace Metal Analysis

沸点

954 °C (lit.)

mp

402 °C (lit.)

密度

6.16 g/mL at 25 °C (lit.)

SMILES字符串

I[PbH2]I

InChI

1S/2HI.Pb/h2*1H;/q;;+2/p-2

InChI key

RQQRAHKHDFPBMC-UHFFFAOYSA-L

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相关类别

一般描述

碘化铅(PbI2)因其晶体结构、光学和电子特性等独特性质而具有巨大的材料科学应用潜力。广泛用于光伏器件、光电器件和半导体器件等研制。碘化铅是一种直接宽带隙半导体，独具热导率高、电子饱和速率高、化学稳定性和运行温度范围宽（−200 °C至+130 °C）的优点。由于较高的吸收率、载流子收集率和极低噪声，它广泛用作X和γ射线探测器。PbI2也用于太阳能、生物成像和光导器件中。

应用

碘化铅可用于：      
  • 作为前驱体盐制造钙钛矿太阳能电池。在前驱体溶液中加入少量过量的PbI2后可通过提高电荷提取来增强器件性能。     
  • 因其电化学特性而用作电池电极材料。它可进行可逆反应，是适合铅电池的候选材料。      
  • 作为关键组分与氧化铅(PbO)共同制作稳定灵敏的半导体探测器材料用于辐射剂量无损检测(NDT)。      
  • 作为关键组分开发医学成像用X射线探测器。      
  • 制备铯铅碘钙钛矿量子点以制造高稳定性的LED。

警示用语：

Danger

危险分类

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2

储存分类代码

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
0000423386
0000404117
0000423386
0000419742
0000416755

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Chen Zou et al.
Nanotechnology, 28(45), 455201-455201 (2017-10-19)
Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor.
Hailiang Liu et al.
Sensors (Basel, Switzerland), 20(23) (2020-12-05)
In this study, we investigated the characteristics of an organic-inorganic hybrid indirect-type X-ray detector with a CH3NH3PbI3 (MAPbI3) perovskite active layer. A layer with a thickness of 192 nm annealed at 100 °C showed higher absorption, higher crystallinity, and lower

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